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A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration

机译:采用32nm SOI CMOS技术的18mW,3.3dB NF,60GHz LNA,具有自主NF校准

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A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.
机译:采用32nm SOI CMOS技术实现的具有20kB存储器的8052微控制器,ADC,温度传感器和3级级联60GHz LNA的自我修复mmWave SoC表现出21dB的峰值增益,平均3.3dB NF从53到62GHz,功耗为18mW。在集成的uC上实现了间接NF感测算法,该算法使自适应偏置算法能够在P,V,T上分别将60GHz NF sigma和LNA功耗降低37%和40%。

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