CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; silicon-on-insulator; system-on-chip; 3-stage cascode LNA; ADC; LNA; SOI CMOS technology; adaptive biasing algorithm; autonomic NF calibration; frequency 53 GHz to 62 GHz; indirect NF sensing algorithm; microcontroller; noise figure 3.3 dB; power 18 mW; self-healing mmWave SoC; size 32 nm; storage capacity 12 Kbit; temperature sensor; Current measurement; Noise measurement; Semiconductor device measurement; Sensors; Temperature measurement; Transmission line measurements; Voltage measurement; 60GHz; LNA; Mm-wave; NF; SoC; autonomic calibration;
机译:采用180 nm SOI CMOS技术的5 GHz 0.95 dB NF高度线性共源共栅浮体LNA
机译:使用45 nm CMOS SOI的具有4.3 dB NF的65 GHz LNA /移相器
机译:具有6.3dB NF和-10dBm P的60–90GHz CMOS双中立LNA技术
机译:32nm SOI CMOS技术的18MW,3.3dB,60GHz LNA,具有自主NF校准
机译:可制造60GHz CMOS LNA的设计技术。
机译:具有嵌入式校准方案的动态pH传感器采用先进的CMOS FinFET技术
机译:采用65 nm CMOS技术的60GHz频段的低功耗高增益LNA