CMOS analogue integrated circuits; field effect MIMIC; integrated circuit layout; millimetre wave amplifiers; wideband amplifiers; 8-stage amplifier; CMOS technology; bandwidth 41 GHz; compact fishbone layout technique; compact wideband amplifier; frequency 160 GHz; gain 15 dB; gain 3 dB; higher-order matching network; power 117 mW; size 40 nm; voltage 0.9 V; Bandwidth; Broadband amplifiers; CMOS integrated circuits; CMOS technology; Gain; Layout; Transmission line measurements; CMOS process; Frequency estimation; Millimeter wave circuits; amplifiers;
机译:4–32 GHz SiGe多频功率放大器,峰值功率为20 dBm,峰值增益为18.6 dB,功率分数带宽为156%
机译:硅上的Al2O3:Er3 +光放大器的增益带宽为80 nm,峰值增益为2 dB / cm
机译:硅上的Al2O3:Er3 +光放大器的增益带宽为80 nm,峰值增益为2 dB / cm
机译:紧凑型160 GHz放大器,具有15-DB峰值增益和41-GHz 3-DB带宽
机译:转移衬底HBT技术中改进的电流增益截止频率和高增益带宽放大器。
机译:超声波设备的宽带S类功率放大器
机译:抛物线光纤放大器产生的63 fs 4.1 MW峰值功率脉冲超出了增益带宽限制
机译:通过量子点激光器中的增益杠杆效应增强3 dB带宽