High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent- -Thickness Trapping Layer

摘要

We made the MoN–$[hbox{SiO}_{2}$– $hbox{LaAlO}_{3}]$–[Ge–HfON]– $[hbox{LaAlO}_{3}$–$ hbox{SiO}_{2}]$–Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-$hbox{Si}_{3}hbox{N}_{4}$-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 $^{circ}hbox{C}$, and a 3.6-V endurance window at $hbox{10}^{6}$ cycles, under very fast 100 $muhbox{s}$ and low $pm$ 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.