films

摘要： Solvent rinse treatments using polar methanol(Me OH)and nonpolar n-hexane have been developed for controlling material concentration gradients along the longitudinal direction of non-fullerene acceptor-based bulk heterojunction(BHJ)films comprised of electron donor polymer,PBDB-T and acceptor,ITIC-m.Before the used solvents(chlorobenzene with 1 vol%DIO)were completely evaporated,ITIC-m rich domains were formed at the top surface of the BHJ films after they were rinsed with Me OH,as evidenced by water contact angle,atomic force microscopy,time-of-flight secondary ion mass spectroscopy,which led to enhanced electron transport in the conventional structure of organic solar cells(OSCs).In contrast,after rinsing with n-hexane,ITIC-m rich domains were formed at the bottom surface of the films,which improved electron transport in the inverted structure OSCs.The enhanced carrier transports increased the PCEs(11.80%and 11.15%)in both conventional and inverted OSCs by 10.29%and 10.35%compared with control devices.The versatile control of material concentration gradients is determined to be feasible owing to the chemical interaction of the used substrates(glass,PEDOT:PSS,and Zn O)and rinsing solvents.

摘要： A theoretical design of a multi-layer for Nd:YAG mirrors resonator is described in this work. An output coupler was designed and fabricated by successive thin layers to achieve very high transmittance at optical wavelengths around 1064 nm for Nd:YAG mirrors resonator. The different film optical filters were used to control the transmittance and reflectance. The three samples of dielectric materials composed of HfO2/Y2O3, Sc2O3 + MgO, and Ta2O5 + TiO2 were used and compared with each other in transmittance, reflectance, full width at half maximum (FWHM), physical thickness, optical thickness, geometric thickness, and incident angles by the software [1].

摘要： Studying the superconductivity of materials using scanning tunneling microscopy (STM)remains a challenge to this day .In this regard,the stability of the tunneling junction is a critical factor,together with the spectroscopy resolution. Using a superconducting tip is an effective way to increase the resolution of the obtained tunneling spectra .For example,Pan et al.showed that the use of superconducting Nb tips resulted in extremely high resolution scanning tunneling spectroscopy (STS).Furthermore,Nb tips have been successfully applied to several systems to acquire improved resolutions .

摘要： The tuneable band gap property of Cadmium-sulphur-selenide (CdS1–xSex) thin film makes it an appropriate material for a wide range of optoelec-tronic applications and this has aroused a lot of interest. In this paper, we report the study of Cadmium-sulphur-selenide (CdS1–xSex) thin films, successfully grown on commercial glass slide substrate by the chemical bath deposition technique. The effect of selenium content (x value) on the structural, and some optical properties have been studied. The bath solution contained cadmium acetate dehydrate [Cd(CH3COO)2·2H2O], so-dium selenosulphate [Na2SeSO3] and thiourea [CS(NH2)2] were used as the sources of Cd2+, Se2﹣ and S2+, respectively. Tartaric acid (C4H6O6) was used as a complexing agent. The pH of the solution was adjusted to 12 by drop-wise addition of ammonia. The bath temperature was kept at 90°C for a deposition time of 1 hour. Post deposition annealing processes of the thin films were performed in a furnace at a temperature of 400°C for two hours. Both as-deposited and annealed films were characterised by Powder X-Ray Diffraction, Scanning Electron Microscopy, UV-Visible Optical Absorption Spectroscopy and Energy Dispersive X-Ray Analysis. Optical absorption data analysis indicates that direct allowed transitions occur in the films. The band gap of the as-deposited CdS1–xSex decreased linearly from 2.34 eV to 1.48 eV, with increasing selenium content, and in the annealed samples, decreased from 1.84 eV to 1.36 eV. X-ray diffrac-tion measurements revealed, that pure CdS, and CdSe had mixed hexago-nal and cubic phases. All the remaining ternary compounds were com-posed of cubic CdS and hexagonal CdSe phases. The annealed samples showed well defined and more intense peaks, suggesting an improvement in crystallinity. The average grain size increased slightly with increasing selenium content. SEM micrographs showed that the films were compact with a smooth texture and good coverage across the entire area of the substrate.

摘要： A new pulsed chemical vapor deposition (PCVD) process has been developed to fabricate iron (Fe) and iron carbide (Fe1-xCx) thin films at low temperature range from 150°C to 230°C. The process employs bis(1,4-di-tert-butyl-1,3-diazabutadienyl)iron(II) as iron source and hydrogen gas or hydrogen plasma as the coreactant. The films deposited with hydrogen gas are demonstrated polycrystalline with body-centered cubic Fe. However, for the films deposited with hydrogen plasma, the amorphous phase of iron carbide is obtained. The influence of the deposition temperature on iron and iron carbide characteristics have been investigated.

摘要： Single phase iron pyrite (FeS2) films have been successfully deposited on ITO-coated glass substrates using a 3-electrode electrochemical system with graphite as the counter electrode and Ag/AgCl as the reference electrode. In this single-step electrodeposition, the FeS precursor thin film was directly electrodeposited on the conductive substrate from the electrolytic bath solution which contained FeSO4.7H2O as an iron source, and Na2S2O3.5H2O as a sulfur source. The deposition was carried out potentiostatically at a constant potential of -0.9 V vs. Ag/AgCl at room temperature. The growth of the iron pyrite phase was achieved by annealing the as-deposited at 500°C for an hour in an ambient of sulfur to form the pyrite phase. For sulfurization, two different techniques, one using the Kipp’s apparatus and a second, which involved heating elemental sulfur at 200°C, were used for the production of the sulfur gas. X-ray diffraction analyses of the sulfurized films showed that both sulfurization techniques appeared to form the pyrite phase, however, the second method yielded films with maximum crystalline order and stoichiometry with no discernable impurity peaks. Optical absorption measurements revealed the existence of a direct transition with an estimated band gap of 1.75 eV. SEM micrograph showed a compact morphology with a rough surface made up of crystallites of irregular shapes and sizes with well-defined edges, covering the entire substrate. EDAX analysis of the film was consistent with the formation of FeS2 pyrite thin films.

摘要： We present the feasibility study of nonlinear dielectrics for the energy storage applications. Corona deposition of electric charges to the surface of thin films of highly polarizable organic molecules (dielectrophores) shows that the electric field inside the dielectric has a highly nonlinear response. The stored energy densities are superior to the polypropylene films, measured for the comparison, and at least comparable to the current electrochemical batteries. These results make us believe that the dielectrophores-based electrostatic capacitors can revolutionize the energy storage market.

摘要： Tin monosulphide(SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition(CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to(040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS.The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ～10~5 cm^(-1). A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.

摘要： High methoxyl pectin (DE = 59.53%) was extracted from plantain peel using acid extraction method. Pectin yield was 40.5%;moisture content was 87.56%;equivalent weight was 1000 g/ml, and galacturonic acid content was 2.89 mg/ml. Composite polymer films incorporating the extracted pectin manifest their best mechanical properties;tensile strength and % elongation of 5.51 MPa and 5.75% respectively with 10 ml glycerol/1g pectin. Raman spectra peaks at 2930 cm1, 1750 cm–1 and 820 cm–1 indicated CH-stretch, C=O ester group of pectin and COH ring in pectin respectively. Films containing pectin sourced from waste are considered potential alternative sources of environmentally benign packaging materials.

摘要： Semiconductor films of organic, doped dimetallophthalocyanine M2Pcs (M = Li, Na) on different substrates were prepared by synthesis and vacuum evaporation. Tetrathiafulvalene (TTF) and tetracyanoquinodimethane (TCNQ) were used as dopants and the structure and morphology of the semiconductor films were studied using IR spectroscopy, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS). The absorption spectra recorded in the ultraviolet-visible region for the deposited films showed the Q and Soret bands related to the electronic π-π* transitions in M2Pc molecules. Optical characterization of the films indicates electronic transitions characteristic of amorphous thin films with optical bandgaps between 1.2 and 2.4 eV. Finally, glass/ITO/doped M2Pc/Ag thin-film devices were produced and their electrical behavior was evaluated by using the four-tip collinear method. The devices manufactured from Na2Pc have a small rectifying effect, regardless of the organic dopant used, while the device manufactured from Li2Pc-TCNQ presents ohmic-like behavior at low voltages, with an insulating threshold around 19 V. Parameters such as the hole mobility (μ), the concentration of thermally-generated holes (p0), the concentration of traps per unit of energy (P0) and the total trap concentration (Nt(e)) were also determined for the Li2Pc-TTF device.

摘要： 本发明公开了一种设置Allegro中Artwork Film的方法及装置，该方法包括：获取待处理PCB的基本信息，基本信息包括：层数和每层的名字；在待处理PCB完成钻孔操作的情况下，基于层数，确定多数待处理PCB中包含的各个Film，各个Film以ArtFilm存在；基于每层的名字确定各个Film中每层需要添加的目标信息；基于各个Film的类型，对目标信息进行设置。上述方法，基于层数确定各个Film，基于每层的名字确定各个Film中需要添加的目标信息，基于各个film的类型，对所述目标信息进行设置，上述的设置过程通过应用程序自动化实现，避免了手动添加，设置繁琐，效率低且极容易遗漏出错的问题。

摘要： 本发明公开了一种COF Film光阻涂覆工序、COF Film生产方法及涂布结构，属于COF Film生产领域，该光阻涂覆工序采用狭缝式挤压将光阻涂覆在由滚筒带动移动的Cu Film带的涂覆面上，该涂覆面为与滚筒相接触的Cu Film带的接触面的相对面。本发明的COF Film生产用狭缝式挤压光阻涂布结构有效避免光阻厚度周期性波动的状况，从而减少对后续显影工序和刻蚀工序的影响，不但降低了线粗线细导致的报废率，还杜绝了断胶，以及提高了涂布精度，减少了光阻消耗。

摘要： 本方案涉及膜材印刷领域的Film膜材印刷网板，包括主网框和副网框以及采用尼龙丝编织而成的主丝网和副丝网，所述主丝网安装于主网框一侧，副丝网安装于副网框一侧，所述主网框和副网框之前设有微调杆，所述主网框一边同轴且固定安装微调杆上，所述副网框一边同轴且铰接安装于微调杆上，在主网框和副网框扣合后，所述主丝网和副丝网相互贴合；所述主网框和副网框边缘均设有用于调节主丝网或副丝网张力的绷紧杆，用于中高精度的丝印环境，能够克服尼龙丝网容易伸缩的问题。

摘要： 本方案设计的一种FILM材料为基板的新型滤光片制作方法，使用FILM材料作为基板，通过镀膜机将两种镀膜材料五氧化三钛与二氧化硅按照一定的比例蒸镀到FILM基板上去，FILM基板厚度只有0.11mm，而传统的白玻璃或者蓝玻璃的滤光片厚度通常是0.21mm，可有效降低摄像头模组的整体厚度；同时光谱透过率0度和30度在10%处的偏移量可以控制在10nm以内，有效降低30度成像失真问题，传统蓝玻璃10%处的偏移高达20‑30nm的偏移量，对30度或者广角的拍摄会失真很多。

摘要： 本发明公开了一种成品COF Film的耐弯折测试的计算方法，包括以下步骤：S1：基材经过现有的COF Film制程，制备标准的MIT蛇形测试线路样板；S2：计算标准的MIT蛇形测试线路样板弯折区单根线路受到的拉伸强度P样品；S3：基材经过现有的COF Film的制程，制备COF Film成品；S4：计算COF Film成品弯折区单根线路受到的拉伸强度P成品；S5：计算P样品与P成品之比n；S6：测试标准MIT蛇形线路样品弯折区的耐弯折次数；S7：计算COF Film成品弯折区耐弯折次数。本发明在不改变量测方法的条件下，仅通过MIT测试方法转换，可计算准确的成品耐弯折次数。

摘要： 本实用新型公开了一种COF Film蚀刻底板及蚀刻槽，包括基板(1)，基板(1)由顶面(2)、底面(3)、左面、右面、前面和后面组成，所述顶面(2)为外弧面，底面(3)为内弧面。本实用新型将蚀刻工序的短路或断路不良率由2％降低到0.2％。

摘要： 本实用新型公开了一种应用于FPD与电子行业的film材铺布装置，涉及film材铺布技术领域，包括板车输送线板车和机架部，且机架部由背板二次定位机构、film材一盛放工位、取放film材手臂和两个film材盛放双层工位围栏组成，所述板车输送线板车位于film材一盛放工位和两个film材盛放双层工位之间，且取放film材手臂位于板车输送线板车的上方；本实用新型取代人工，减少人员参入数量和参与深度，生产效率与良率大幅提高，传统的组膜工位为三张膜材在产线一侧平铺开，占用线体工位过多，厂房里利用率低，现采用在线体两侧布局与上下层布局的方式，大大提高厂房里利用率。

摘要： 本实用新型公开了一种Film成型产品，属于模内注塑技术领域，包括产品本体，所述产品本体设有滴塑区，所述滴塑区周边围设有凸棱，所述凸棱凸出于所述滴塑区表面；滴塑时，所述凸棱能够阻止滴塑胶溢出滴塑区，滴塑后所形成的滴塑膜与所述凸棱平滑过渡连接。本实用新型的Film成型产品采用在滴塑区周边设置凸出于滴塑区表面的凸棱取代现有技术中的阻止油墨，不仅能够阻止滴塑胶外溢、提高成品率，且能够在产品滴塑过程中免去阻止油墨印刷过程，简化了滴塑工艺，降低企业生产成本、提高了生产效率。

摘要： 本实用新型涉及烘箱技术领域，尤其为一种FILM片料用烘箱，包括第一外壳，所述第一外壳的右端外侧固定连接有控制器，所述第一外壳的右端内侧固定连接有下料导料板，所述第一外壳的左端内侧固定连接有出料导料板，所述第一外壳的左右两端内侧均固定连接有第一电机，所述第一电机的主轴末端固定连接有主动皮带轮，所述主动皮带轮的一端外侧转动连接有传动皮带，所述传动皮带的顶端内侧转动连接有从动皮带轮，所述从动皮带轮的一端内侧中央位置处固定连接有第一转动轴，且第一转动轴的前后两端外侧均与第一外壳的前后两端内侧转动连接，本实用新型中，通过设置的齿轮、圆柱烘箱、红外线加热发射丝，可以实现装置在烘烤FILM片料的时候温度更加的均匀。

摘要： 本实用新型公开了一种具有优良耐折性能的COF Film结构及使用其的液晶屏、OLED、QLED，包括PI层(5)、Cu层(4)、Sn层(3)和SR层(2)，SR层(2)为上层，PI层(5)为下层，Cu层(4)、Sn层(3)设置在SR层(2)和PI层(5)之间，Cu层(4)的上表面与Sn层(3)的下表面相贴合，Cu层(4)的下表面与PI层(5)的上表面相贴合，Sn层(3)的上表面与SR层(2)的下表面相贴合，PI层(5)厚度为20‑28um，Cu层(4)厚度为4‑7um，SR层(2)厚度为5‑20um，Sn层(3)厚度为0.1‑0.5um。本实用新型的具有优良耐折性能的COF Film结构耐折性好。