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NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices

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1.Investigation of Compressive Strain Effects Induced by STI and ESL

机译：STI和ESL诱导诱导压缩应变效应的研究
- 作者：S. Zaouia;S. Cristoloveanu;A. H. Perera
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- SOI;
- MOSFET;
- stress;
- etch-stop layer;
- STI;
- GIFBE;
2.Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer

机译：通过离子注入和氢转移形成的CMOS晶体管的纳米级半导体异质结构
- 作者：Vladimir Popov;Ida Tyschenko;Alexander Cherkov;Matthias Voelskow
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- hydrogen transfer;
- silicon film;
- Si/SiO_2bonded interface;
- implanted impurities;
- segregation;
- endoxtaxy;
3.Nanowire Quantum Effects in Trigate SOI MOSFETs

机译：Trige SOI MOSFET中的纳米线量子效应
- 作者：Jean-Pierre Colinge
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Silicon-on-Insulator;
- SOI MOSFET;
- multiple-gate MOSFET;
4.Non-Planar Devices for Nanoscale CMOS

机译：用于纳米级CMOS的非平面装置
- 作者：Max C. Lemme;H. D. B. Gottlob;Heinrich Kurz
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- SOI;
- FinFET;
- Tri-Gate;
- triple gate;
- Nano-CMOS;
- Nanowire;
5.Fluorine-Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates

机译：氟空闲工程：SOI基材中掺杂剂扩散抑制的可行解决方案
- 作者：Huda Abdel Wahab El Mubarek;Peter Ashburn
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Vacancy eneineering;
- Fluorine;
- SOI;
6.High-κ Dielectric Stacks for Nanoscaled SOI Devices

机译：用于纳米型SOI器件的高κ电介质叠层
- 作者：Steve Hall;O. Buiu;I. Z. Mitrovic;Y. Lu;W. M. Davey
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- high-k dielectric stacks;
- nanodevices;
- SOI;
7.Resonant Tunneling Devices on SOI Basis

机译：SOI基础上的谐振隧道设备
- 作者：Bogdan Majkusiak
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- nanoelectronics;
- silicon-on-insulator;
- resonant tunneling;
8.Noise Research of Nanoscaled SOI Devices

机译：纳米SOI器件的噪声研究
- 作者：N. Lukyanchikova
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- low-frequency noise;
- 1/fnoise;
- LKE Lorentzian;
- BGI Lorentzian;
- EVBtunneling current;
- surface quantization;
- SOI MOSFET;
- nanoscaling;
9.Electrical Characterization and Special Properties of FINFET Structures

机译：FINFET结构的电学特性和特殊性质
- 作者：T. Rudenko;Valeria Kilchytska;N. Collaert;Alexei N. Nazarov;M. Jurczak;Denis Flandre
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Silicon-on-insulator(SOI);
- FinFET;
- multi-gate FETs;
- effective channel mobility;
- split CV-technique;
- gate tunneling current;
10.All Quantum Simulation of Ultrathin SOI MOSFETs

机译：超薄超级MOSFET的所有量子仿真
- 作者：A. Orlikovsky;V. Vyurkov;V. Lukichev;I. Semenikhin;A. Khomyakov
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- quantum simulation;
- nanometer field effect transistor;
11.Electron Transport in Silicon-on-Insulator Nanodevices

机译：绝缘体上硅的电子传输
- 作者：F. Gamiz;A. Godoy;C. Sampedro
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Electron transport;
- mobility;
- Monte Carlo;
- Silicon-on-Insulator;
- quantum well;
- quantum wires;
12.Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems

机译：纳米透视UTB SOI设备的可变性及其对电路和系统的影响
- 作者：Asen Asenov;Khairulmizam Samsudin
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- UTB SOI;
- MOSFET;
- SRAM;
- Intrinsic Parameter Variation;
13.Semiconductor Nanostructures and Devices

机译：半导体纳米结构和装置
- 作者：Joachim Knoch;Hans Luth
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Nanowire;
- band-to band tunneling;
- tuneling FET;
- SB-MOSFET;
- RTD;
14.Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs

机译：基板对SOI MOSFET的输出电导频率响应的影响
- 作者：Valeria Kilchytska;David Levacq;Dimitri Lederer;Guillaume Pailloncy;Jean-Pierre Raskin;Denis Flandre
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- SOI MOSFETs;
- output conductance;
- frepuency response;
- device simulation;
- device scaling;
15.Status and trends in SOI nanodevices

机译：SOI NanoDevices的状态和趋势
- 作者：Francis Balestra
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- SOI nanodevices;
- Multi-gate MOSFETs;
- Nanowires;
- Strain;
- channel orientation Memories;
16.SiGe Nanodots in Electro-Optical SOI Devices

机译：电光SOI器件中的SiGe纳米棒
- 作者：Anatoly V. Dvurechenskii;A. I. Yakimov;N. P. Stepina;V. V. Kirienko;P. L. Novikov
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- quantum dots;
- germanium;
- silicon;
- field effect transistor;
- infrared photodetector;
- memory device;
17.Integration of silicon Single-Electron Transistors Operating at Room Temperature

机译：在室温下操作的硅单电子晶体管的整合
- 作者：Toshiro Hiramoto
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Coulomb blockade;
- quantum effect;
- quantum dot;
- single electron;
- resonant tunneling;
- CMOS;
- MOSFET;
- nano device;
18.Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions

机译：SOI FET中的移动性建模，用于不同的基板取向和应变条件
- 作者：Viktor Sverdlov;Enzo Ungersboeck;Hans Kosina
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- mobility modeling;
- Monte Carlo simulations;
- SOI FET;
- Stress;
19.Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs

机译：用于制造四重栅极MOSFET的悬浮硅 - 绝缘体纳米线
- 作者：Vikram Passi;Benoit Olbrechts;Jean-Pierre Raskin;Jens Bolten;Thomas Mollenhauer;Thorsten Wahlbrink;Max C. Lemme;Heinrich Kurz
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Electron-beam lithography;
- Quadruple-Gate;
- Silicon-onInsulator;
20.Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs

机译：多门SOI MOSFET中掺杂波动效应
- 作者：C. A. Colinge;W. Xiong;C. R. Cleavelin;Jean-Pierre Colinge
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Silicon-on-Insulator;
- Doping flucuations;
- SOI MOSFET;
- multiple-gate MOSFETs;
21.MuGFET CMOS Process with Midgap Gate Material

机译：Mugfet CMOS工艺与中间栅极材料
- 作者：W. Xiong;C. R. Cleavelin;T. Schulz;K. Schrufer;P. Patruno;Jean-Pierre Colinge
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Silicon-on Insulator;
- SOI MOSFET;
- multiple-gate MOSFETs;
22.Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology

机译：通过自对准量子点技术制造的单电子NVM SOI器件中的电荷捕获现象
- 作者：Alexei N. Nazarov;Vladimir S. Lysenko;Xiaohui Tang;Nicolas Reckinger;Vincent Bayot
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Single-electron memory;
- charge trapping;
- self-aligned quantum dot technology;
23.SiGeC HBTs: impact of C on Device Performance

机译：SIGEC HBT：C对设备性能的影响
- 作者：I. Z. Mitrovic;Huda Abdel Wahab El Mubarek;O. Buiu;Steve Hall;Peter Ashburn;J. Zhang
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- SiGeC HBTs;
- carbon;
- Gummel plots;
- bandgap;
- leakage currents;
24.Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets

机译：阈值电压的三维（3-D）分析建模，DIBL和Qualtical围绕MOSFET的圆柱形栅极的摆动
- 作者：H. A. El Hamid;B. Inguez;Jaume Roig
- 会议名称：《NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices》 | 2007年
- Gate All Around MOSFET;
- short-channel effects;
- 3-D modeling;
- scalability;