Nanowire Quantum Effects in Trigate SOI MOSFETs

摘要

This paper describes low-dimensional nanowire quantum effects that occur in small trigate SOI MOSFETs. 2D numerical simulation is used to calculate the electron concentration profile as a function of gate voltage in devices with different cross sections. The smaller the section, the higher the threshold voltage. A dynamic increase of threshold voltage with electron concentration is observed. Inter-subband scattering causes oscillations of the transconductance when measured as a function of the gate voltage. These oscillations are visible at low temperature (< 30K) in samples with a 45 × 82nm cross section and at room temperature in devices with a 11nm × 48nm cross section.