SiGe Nanodots in Electro-Optical SOI Devices

摘要

The electronic and optical phenomena, as well as possible device-oriented application in Ge/Si and Ge/SiO2 nanodots that have been synthesized by molecular-beam growth are the scope of this article. We focus on the fundamental aspects and device applications of the small size dots whose electronic states resemble those of an atom even at room temperature.