SOI SUBSTRATE, ELEMENT SUBSTRATE, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL APPARATUS, ELECTRONIC EQUIPMENT, METHOD OF MANUFACTURING THE SOI SUBSTRATE, METHOD OF MANUFACTURING THE ELEMENT SUBSTRATE, AND METHOD OF MANUFACTURING THE ELECTRO-OPTICAL APPARATUS

摘要

An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film (204).