IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

摘要

The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density.The electric potential equation is discretized by a mixed finite element method.The electron and hole density equations are treated by implicit-explicit multistep finite element methods.The schemes are very efficient.The optimal order error estimates both in time and space are derived.