High-κ Dielectric Stacks for Nanoscaled SOI Devices

摘要

The combination of ultra-thin body (UTB), undoped silicon-oninsulator films to control short channel effects and high permittivity (κ) gate dielectric with metal gate to control gate leakage current, can provide a highly scaleable technology to address challenges towards the end of the road map. This paper sets out the basic issues and physics associated with both hi- κ/metal gate and UTB from a device perspective, and establishes the advantages associated with merging the two approaches. A review of the state-of the art devices is undertaken also which serves to emphasize the great potential and progress of this technology.