SiGeC HBTs: impact of C on Device Performance

摘要

Our UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of the consortium work, focused on fabricating SiGeC HBTs and on the impact of C (up to 1.6?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1.