SiGeC薄膜表征对于光刻对准性能的影响研究

摘要

Si1-x-yGexCy是继Si和GaAs之后又一重要的半导体材料.由于Si1-x-yGexCy具有优于纯Si材料的良好特性,器件和制程又可与Si工艺兼容,采用Si1-x-yGexC及其Si1-x-yGexCy/Si异质结所制作出来的器件如异质结双极晶体管(Heterojunction Bipolar Transistor,HBT),其电性能几乎可达到GaAs等化合物半导体制作的同类器件的水平,而且在成本上低于GaAs HBT.因此Si1-x-yGexCy可能是未来微电子发展进程中必不可少、并起着关键作用的一种材料.文章对Si1-x-yGexCy薄膜的表征进行了探索,在总结大量数据的基础上,验证了利用Si1-x-yGexCy薄膜的反射率进行光学表征的方法的可行性.同时,文章系统研究了Si1-x-yGexCy薄膜的工艺条件、薄膜成份、薄膜厚度等参数对光刻对准性能的影响.%Compared with Si and GaAs, Si1-x-yGexCy is another important material used in Semiconductor. Better performance than pure Si and combined with traditional Si fabrication makes Si1-x-yGexC and Si1-x-yGexCy/Si product Heterojunction Bipolar Transistor, HBT, and it’s performance can be similar with GaAs HBT, but with the lower cost. So Si1-x-yGexCy will be an essential and key material in the evolution of semiconductor in the future. On the base of mass data, this thesis studies Si1-x-yGexCy thin film identification, confirm the feasibility of Lithography alignment using thin film reflectivity. Also, this thesis studies the influence to Lithography alignment of several parameters that include the epitaxial growth, the different substrates, the pattern density and the thickness.