Noise Research of Nanoscaled SOI Devices

摘要

The changes in the low-frequency noise of SOI MOSFETs accompanying their nanoscaling are considered. The behaviour of the 1/f noise in the course of downscaling as well as the influence of the additional noise sources appearing in the nanoscaled devices on their noise characteristics are explained. It is shown that the drastic changes in the noise performance of the devices can take place as a result of their nanocsaling.