Integration of silicon Single-Electron Transistors Operating at Room Temperature

摘要

Recent research and development of silicon single-electron transistors are reviewed. The fabrication process of extremely small silicon dot in the channel of MOS transistors has been advanced, and the dot size is now as small as 2 nm. Consequently, the single-electron transistors operate at room temperature and the peak-to-valley current ratio of the Coulomb blockade oscillations reaches as high as 480 at room temperature. The attempts to integrate the single-electron transistors and to develop new circuit applications are also described.