Peak position control of Coulomb blockade oscillations in silicon single-electron transistors with floating gate operating at room temperature

摘要

A silicon single-electron transistor (SET) with a floating gate (FG) that covers the entire SET structure is proposed and fabricated to study a nonvolatile and precise peak shift of Coulomb blockade oscillations. Large Coulomb blockade oscillations with a peak-to-valley current ratio as high as 14.1, a parallel peak position control without a change in peak height, and a long retention time of over one month are successfully demonstrated at room temperature. The proposed FG SET is suitable for hybrid SET/CMOS circuits for adding more functionalities into future very large scale integration (VLSI) devices.