Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor

摘要

We have observed for the first time the large temperature dependence of Coulomb blockade (CB) oscillation peak current in a room-temperature-operating silicon single-hole transistor (SHT) with high peak-to-valley current ratio (PVCR). The large temperature dependence is not explained by the classical CB theory for single-dot single-electron transistors (SETs). The SHT is fabricated in the form of an ultranarrow-wire-channel metal-oxide-semiconductor field-effect transistor (MOSFET), which acts as a single-dot SHT at room temperature. It is found that, considering the result of numerical calculation, this large temperature dependence is caused by stochastic Coulomb blockade in the SHT, which has multiple-dot behavior at low temperatures. Other possible origins, such as thermally activated current and parasitic MOSFETs, are also discussed.