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SINGLE-ELECTRON TRANSISTOR WITH SELF-ALIGNED COULOMB BLOCKADE
SINGLE-ELECTRON TRANSISTOR WITH SELF-ALIGNED COULOMB BLOCKADE
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机译:带自对准库仑阻塞的单电子晶体管
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摘要
Semiconductor devices include a thin channel region formed on a buried insulator. A source and drain region is formed on the buried insulator, separated from the channel region by notches. A gate structure is formed on the thin channel region.
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