Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

摘要

A novel structure of Si single-electron transistor (SET) with strong gate-dot coupling is developed, where the gate is fabricated just on the top of the transport channel with quantum dots (QDs) formed by anisotropic wet etching and thermal oxidation. Based on the fabricated devices having various time of wet etching and oxidation, coulomb blockade (CB) oscillations are clearly observed at high temperatures due to the large quantized energy spacing. Especially, all the measured devices exhibit high gate modulation factors. The SETs with a strong gate-dot coupling will be useful for applications in logic circuits to achieve high voltage gain.