Room-temperature Observation of Large Coulomb-blockade Oscillations from Germanium Quantum-dot Single-hole Transistors with Self-aligned Electrodes

摘要

A single Ge quantum-dot (～10 nm) forms and self-aligns with source/drain electrodes via SiO{sub}2 tunneling barriers using thermal oxidation of a SiGe-on-insulator nanowire. Thereby, a Ge single-hole transistor with self-aligned electrodes is experimentally realized based on FinFET technology and features with clear Coulomb staircase/negative differential conductance and large Coulomb-blockade oscillation behaviors at room temperature. This work provides a simple approach to alleviate this nanofabrication bottleneck and thereby reduce series resistances and increase design freedom for SETs.