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Single electron transistor with self-aligned Coulomb blockade
Single electron transistor with self-aligned Coulomb blockade
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机译:具有自对准库仑阻挡的单电子晶体管
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摘要
Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is formed on the thin semiconductor layer. The thin semiconductor layer is etched back and the additional semiconductor material to form source and drain regions and a channel region, with notches separating the source and drain region from the channel region.
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