AASERT-93 Field-Effect-Controlled, Coulomb-BlocKage Single-Electron Transistor inSilicon

摘要

X-ray nanolithography for device fabrication was extended farther than previouslyreported. A new substrate photoelectron effect in x-ray nanolithography was observed. A way to circumvent this apparent limit to the resolution limits of x-ray nanolithography for real devices was found. Novel coulomb-blockade devices have been fabricated using this modified process. Preliminary measurements are underway on devices which should allow a better understanding of how the coulomb blockade disappears as coupling of the quantum dot to the environment increases via either a tunnel barrier or a quantum point contact.