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Carbon nanotube single-electron transistors with single-electron charge storages

机译:具有单电子电荷存储的碳纳米管单电子晶体管

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摘要

Carbon nanotube single-electron transistors (CNTSETs) with single-electron charge storages were fabricated to detect single-electron charges from a CNT channel to a charge storage. A single-electron charge storage is composed of Au floating dots between tunneling and blocking layers of Al2O3. Electrons were injected into a Au floating dot by sweeping gate voltage, and the Coulomb peak was shifted owing to the effect of electrons inside the Au floating dot. In addition, a staircase relationship between the charging voltages and the peak positions was observed. The calculation based on this staircase relationship revealed that the single-electron charging into the Au floating dot was obtained. Therefore, our devices are one of the candidates for CNTSET-based single-electron memories, which can be used for digital operating and ultralow-power consumption devices. (C) 2015 The Japan Society of Applied Physics
机译:制造具有单电子电荷存储的碳纳米管单电子晶体管(CNTSET),以检测从CNT通道到电荷存储的单电子电荷。单电子电荷存储由Al2O3的隧穿层和阻挡层之间的Au浮点组成。通过扫栅电压将电子注入到Au浮点中,并且由于Au浮点内部的电子的作用,库仑峰移动。另外,观察到充电电压与峰值位置之间的阶梯关系。基于该阶梯关系的计算表明,获得了到Au浮点中的单电子电荷。因此,我们的设备是基于CNTSET的单电子存储器的候选产品之一,可用于数字操作和超低功耗设备。 (C)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第6s1期|06FF05.1-06FF05.4|共4页
  • 作者单位

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan;

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan;

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan|Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan;

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan|Tokyo Univ Agr & Technol, Inst Engn, Koganei, Tokyo 1848588, Japan;

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan;

    Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan;

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