Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions

摘要

Conduction band modification due to shear stress is investigated. Mobility in single- and double-gate SOI FETs is modeled for silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.