Semiconductor Nanostructures and Devices

摘要

In this paper we present semiconductor nanostructures and devices for future nanoelectronics applications. New device architectures for advanced CMOS as well as novel concepts for a beyond CMOS scenario are presented and discussed. We study SOI Schottky-barrier MOSFETs and show methods for improving the device performance using dopant segregation during silicidation as well as ultrathin body SOI and ultrathin gate oxides. Furthermore, electronic transport in GaN and InN nanowire structures is discussed. In addition, novel device concepts are also introduced and the electronic transport in such structures is studied. In particular, nanoscale resonant tunneling diodes with improved peak-to valley ratio and a band-to-band tunneling transistor based on a nanowire/ nanotube that allows for subthreshold swing smaller than 60mV/dec are presented.