Novel Non-Volatile Memory Devices Based on Magnetic Semiconductor Nanostructures for Terabit Integration

摘要

This research project exploited new spin-dependent phenomena or concepts utilizing the unique properties of graphene for carbon based spintronics as well as more conventional semiconductor based magnetic systems. The primary focus of the effort was on the device concepts utilizing electrical control of the magnetism, which is one of the main advantages of the semiconductor-based magnetic nanostructures over the metallic counterparts. Combined with developments in the materials research, the proposed device concepts could lay the ground for low-power nonvolatile memory and programmable logic elements beyond the current technological limit.