半绝缘衬底上Si掺杂InP的纳米孔腐蚀与电学性质研究

摘要

The morphology and electricity of InP nanoporous was discussed. On the semi-insulting wafer, n-InP layer doped Si was grown by MOCVD. The porous structure was made in n-InP layer by anodization in aqueous KOH. The feasibility of pore propagation in InP layer over semi-insulting wafer was confirmed by experiment with clear sur-face imagination and regular structure of nanoporous as result. Through Hall test, it was discussed that how anodized pore propagation changed electronic capability of n-InP surface. It is realized that InP doped Si lower than 1018cm-3 could improve concentrate by process of anodiztion porous structure.%利用MOCVD在InP半绝缘衬底上生长N型InP,在KOH溶液中电化学腐蚀形成纳米多孔结构的.通过实验证实在半绝缘衬底上的InP纳米孔腐蚀具有可行性,并且得到了腐蚀质量较好、图形清晰、结构规整的纳米孔材料.在对其进行霍尔测试,得到了腐蚀孔对于n型InP材料表面电学性质的改变,实现了低掺杂浓度(1018cm-3)的InP通过表面纳米孔腐蚀的方式提高载流子浓度,改善n型InP层表面电学性能.