1.55 mu m InGaAsP/InP laser buried in a high-resistivity epitaxial layer on a semi-insulating InP substrate

摘要

A buried heterostructure (BH) 1.55 mu m laser embedded in a high resistivity epitaxial layer on a semi-insulating substrate is described. This device has a planar surface and both a p- and an n-type electrode on the same side, facilitating integration of electronic devices. Its threshold current is typically 9 mA. Its small signal 3 dB modulation bandwidth was 14 GHz due to the reduction of device resistance and capacitance. No degradation was observed in an aging test at 50 degrees C even after more than 3000 h.