Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser

摘要

A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-µm-wide active region.