Low resistance 1.55 mu m InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure

摘要

An InGaAsP ( lambda /sub g/=1.3 mu m) buffer layer, inserted between an InGaAs contact layer and an InP cladding layer, efficiently reduces the differential resistance of laser diodes at a threshold current of 10 mA. Laser diodes using this multilayer contact structure show long-term stable operation of more than 10/sup 4/ h at 50 degrees C.