Buried-Oxide Ridge-Waveguide InAlAs-InP-InGaAsP (lambda approximately 1.3micrometers) Quantum Well Heterostructure Laser Diodes

摘要

Native oxide technology is used to fabricate long wavelength (lambda approx.1.3/micrometers) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes with a buried oxide undercutting and constricting the ridge-waveguide active region. The buried native oxide of constricts the current and reduces edge and surface losses. Data are presented showing threshold currents as low as approx. 140 mA for approx. 13-micrometers-wide stripes (L approx. 750 micrometers), with maximum continuous wave output powers as high as approx. 225 mW/facet and external differential quantum efficiencies up to 67% (300 K, uncoated facets). Native-oxides-defined, Long wavelength laser, 1.3 micrometers quantum well laser InAlAs-InGaPAs, QW laser, InAlAs native oxide buried, InAlAs native oxide.