High-Reliable and High-Speed 1.3 $mu$m Complex-Coupled Distributed Feedback Buried-Heterostructure Laser Diodes With Fe-Doped InGaAsP/InP Hybrid Grating Layers Grown by MOCVD

摘要

In this paper, we report the fabrication of high-reliability and high-speed 1.3 $mu$m complex-coupled distributed feedback (CC-DFB) buried heterostructure (BH) laser diodes (LDs) with Fe-doped InGaAsP/InP hybrid grating layers. High optical coupling coefficient and eminent current confining ability are accomplished by combining the Fe-doped InGaAsP/InP current-blocking-grating (CBG) layers to provide both the distributed-feedback index- and gain-coupling coefficients. Besides, the narrow-stripe BH LDs are implemented by burying the active region with a Fe-doped InP current-blocking layer during the epitaxial regrowth. The fabricated CBG CC-DFB BH LDs at 20 $^{circ}$C shows a low threshold current of 5.3 mA, a maximum light output power of 36 mW at 100 mA, a high slope efficiency of 0.41 mW/mA, and a side-mode suppression ratio (SMSR) of 42 dB at twice the threshold. In addition, these LDs exhibit a maximum operation temperature of 125 $^{circ}$C, an extremely low threshold current of 15.8 mA at 90 $^{circ}$C, a small variation in slope efficient of only −1 dB in the temperature range from 20 $^{circ}$C to 80 $^{circ}$C, and a characteristic temperature of 77 K and 56 K between 20 $^{circ}$C and 60 $^{circ}$C, and 70 $^{circ}$C and 120 $^{circ}$C, respectively. Furthermore, these 1.3 $mu$m CBG CC-DFB BH LDs exhibit a high-speed characteristic up to 11.8 GHz at room temperature and -an estimated median lifetime of more than $1.1 times 10^5$ h or 12.5 years at 5 mW and 85 $^{circ}$ C.