InGaAsP/InP Based 1.3/1.55 Micron Vertical Cavity Surface Emitting Lasers for Wavelength Division Multiplexed High Speed Distributed Computing. Phase 1.

摘要

Wavelength division multiplexed communication systems are becoming increasingly attractive for maximizing the data capacity of long range fiber optic links. Currently, distributed feedback (DFB) semiconductor lasers must be used due to the system requirements of precise single frequency lasers. The high cost of DFB lasers and associated control circuitry has made these systems too expensive for wide acceptance. In this research the possibility of using wavelength division multiplexed arrays of single 1.55 micron InGaAsP vertical cavity surface emitting lasers has been analyzed. The laser arrays have the potential to dramatically reduce the costs of sources compared with distributed feedback laser arrays. This research has focused on the technologies of wafer fusion, step etching and current constriction to develop designs that meet wavelength division multiplexed system requirements. Experiments and modeling has shown that 4x4 arrays of vertical cavity lasers spaced 2nm apart in wavelength are a realistic goal. The sixteen lasers would each be capable of launching single mode powers above lmw into a fiber at drive currents below 8mA. Vertical cavity lasers, Distributed computing, Wavelength division multiplexing, InGaAsP lasers.