Electrical Properties of Fe-Doped Semi-Insulating InP After Proton Bombardment and Annealing

摘要

Abstract--The effects of proton bombardment and subsequent 30-min annealing on the electrical properties of semi-insulating InP doped with Fe have been measured for proton doses and for annealing temperatures from 80 to 750 C. Proton bombardment decreases the sheet resistivity. The sheet resistivity is further decreased by annealing at temperatures up to 200-250 C but is increased by annealing at higher temperatures. Semi-insulating behavior is restored by annealing at 450 C or above. These changes can be explained by the formation of donor and acceptor defects at relative rates that vary with proton dose and by the removal of these defects at relative rates that vary with annealing temperature, although a variation in the effectiveness of the Fe acceptors or a hopping contribution to the conductivity may also play a role.