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Laser Transmission Bonding of Silicon with Titanium and Copper Layer for Wafer-Level Packaging

机译:用钛和铜层的硅和铜层的激光传输键合晶片级包装

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For packaging of silicon components with high spatial selectivity and small heat affected zone (HAZ) laser transmission bonding (LTB) of silicon-silicon compounds using the intermediate layer system copper-titanium is investigated. The bonds are realized by using a cw-thulium fiber laser (wavelength 1940 nm). Several process parameters, like laser intensity, feed rate and contact pressure, are analyzed and optimized during the investigation. Also varying layer thicknesses for titanium and copper are compared in order to analyze their influence on the LTB process. Results are examined regarding the tensile strength measured by using tensile test. Occuring bond failures during the experiments are described and methods for avoiding these are discussed. Micrographs are analyzed in order to investigate the bond zone by SEM. Specimens bonded with corresponding standard bond process using the same layer system and bond geometry are used in order to compare the results.
机译:研究了使用中间层系统铜钛的具有高空间选择性和小型热影响区域(HAZ)激光传输粘合(LTB)的硅组分的包装。通过使用CW-硫纤维激光器(波长1940nm)来实现键合。在调查期间分析和优化了几种工艺参数,如激光强度,进料速率和接触压力。比较钛和铜的不同层厚度,以分析它们对LTB工艺的影响。研究了通过使用拉伸试验测量的拉伸强度的结果。描述了在实验期间发生粘合失败,并讨论了避免这些方法。分析显微照片以便通过SEM研究粘合区。使用使用相同层系统和粘合几何与相应的标准键流程键合的标本以比较结果。

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