Correlated Proton and Heavy Ion Upset Measurements on IDT Static RAMs (Random Access Memory Devices)

摘要

Measurements of upset cross-sections and linear energy transfer (LET) thresholds have been made on two 16K CMOS/NMOS static RAMs. The two RAMs are the 6116 (2KX8) and 71681 (4KX4), both using bulk process parts, referred to in this report as bulk and radiation-hardened epitaxial process parts. Test beams include 62 MeV protons at 0 deg as well as beams of 140 MeV krypton, 178 MeV argon, 89 MeV neon, and 67 MeV nitrogen, at various incident angles from 0 to 70 deg. In conjunction with these measurements, a single event latch up threshold is developed for the four types of devices.