Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) Devices

摘要

Results of neutron induced single event upset (SEU) testing of two Synchronous Burst Static Random Access Memory (SRAM) devices, the Galvantech GVT71128G36 128K x 36 and the GSI GS816273CC 256K x 72, and the internal RAM (iRAM) in the Texas Instruments SM32C6713BGDPA20EP Digital Signal Processor (DSP) are described. Four samples of each device type were irradiated with a 14-MeV neutron source, with and without a polyethylene moderator. The units were irradiated using a continual read/write correct loop using several bit patterns. All units-under-test were operated during irradiation using the respective operating datasheet supply potential. It is noted that one of these devices exhibited a large low energy (<; 1MeV) neutron cross section.