首页> 外国专利> First-in, first-out integrated circuit memory device utilizing a dynamic random access memory array for data storage implemented in conjunction with an associated static random access memory cache

First-in, first-out integrated circuit memory device utilizing a dynamic random access memory array for data storage implemented in conjunction with an associated static random access memory cache

机译:先进先出集成电路存储器,利用动态随机存取存储器阵列进行数据存储,并结合相关的静态随机存取存储器高速缓存来实现

摘要

An integrated circuit first-in, first-out ("FIFO") memory device comprises an input bus for receiving data, an input buffer coupled to the input bus for storing the data and at least one dynamic random access memory ("DRAM") array coupled to the input buffer. A write pointer is operative for storing the data in the input buffer to a location within the memory array indicated and an output bus is coupled to the memory array and a read pointer for providing previously written data from the memory array at a location indicated by the read pointer. In a preferred embodiment, the FIFO further comprises at least one static random access memory ("SRAM") cache interposed between the input and output buses and the memory array having a width corresponding to each row of the memory array.
机译:一种集成电路先进先出(“ FIFO”)存储设备,包括用于接收数据的输入总线,耦合到该输入总线以存储数据的输入缓冲器以及至少一个动态随机存取存储器(“ DRAM”)数组耦合到输入缓冲区。写入指针可用于将输入缓冲区中的数据存储到所指示的存储阵列内的某个位置,输出总线耦合至该存储阵列,而读取指针可将存储阵列中先前写入的数据提供给所指示的位置。读取指针。在优选实施例中,FIFO还包括至少一个静态随机存取存储器(“ SRAM”)高速缓存,该高速缓存插入在输入和输出总线与具有与存储阵列的每一行相对应的宽度的存储阵列之间。

著录项

  • 公开/公告号US5901100A

    专利类型

  • 公开/公告日1999-05-04

    原文格式PDF

  • 申请/专利权人 RAMTRON INTERNATIONAL CORPORATION;

    申请/专利号US19970840118

  • 发明设计人 CRAIG TAYLOR;

    申请日1997-04-01

  • 分类号G11C7/00;

  • 国家 US

  • 入库时间 2022-08-22 02:08:11

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