Characteristics of Strained In0.65Ga0.35As/In0.52Al0.48As HEMT (High Electron Mobility Transistors) with Optimized Transport Parameters

摘要

The dc and microwave performance of a strained In(0.65) Ga(0.35)As/In(0.52)Al(0.48)As HEMT is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic dc transconductance and cutoff frequency of 1.4-micrometer-long gate HEMT's are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) 1.55 x 10 to the 7th power cm/s at 300 K. Keywords: High electron mobility transistors, Reprints. (AW)