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3D Simulation and Optimization of Characteristics of Al0.1Ga0.9N/In0.2Ga0.8N High Electron Mobility Transistor with B0.03Ga0.97N Back-Barrier Layer

机译：用B0.03Ga0.97N背阻挡层的Al0.1Ga0.9n / In0.2Ga0.8N高电子迁移晶体管特性的3D仿真和优化

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Fatima Zahra Bechlaghem; Abedelkader Hamdoune;
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年度 2021
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1. Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer [J] . Yan Gu, Dongmei Chang, Haiyan Sun, Electronics . 2019 ,第8期

机译：具有极化梯度AlGaN背势垒层的InAlN / GaN高电子迁移率晶体管（HEMT）的理论研究
2. Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer [J] . Yan Gu, Dongmei Chang, Haiyan Sun, Electronics . 2019 ,第8期

机译：具有极化梯度AlGaN背势垒层的InAlN / GaN高电子迁移率晶体管（HEMT）的理论研究
3. Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors [J] . Longobardi Giorgia, Udrea Florin, Sque Stephen, Power Electronics, IET . 2015 ,第12期

机译：通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
4. The Application of the Ion versus log(Ig) Plot to Characterize Depletion-mode High Electron Mobility Transistors with the Insertion of a Very Thin Evaporated Al Layer to AIGaN/GaN High Electron Mobility Transistors as an Example [C] . W.S. Lau, B.H. Tan Electrochemical Society;Symposium on Wide-Bandgap Semiconductor Materials and Device;International Meeting on Chemical Sensors . 2020

机译：离子与Log（Ig）图的应用表征耗尽模式高电子迁移率晶体管，随着将非常薄的蒸发的Al层插入Aigan / GaN高电子迁移率晶体管作为示例
5. Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations. [D] . Soligo, Riccardo. 2016

机译：通过基于Monte Carlo粒子的器件仿真对GaN高电子迁移率晶体管和热电子晶体管进行建模和设计。
6. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study [O] . Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, 2020

机译：具有铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和工作特性：仿真研究
7. Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor [O] . Li W, Wang XL, Qu SQ, 2014

机译：新型（InxAl1-xN / AlN）MQWs / GaN高电子迁移率晶体管的二维电子气特性的数值模拟
8. Characteristics of Strained In0.65Ga0.35As/In0.52Al0.48As HEMT (High Electron Mobility Transistors) with Optimized Transport Parameters [R] . Ng, G. I., Hong, W. P., Pavlidis, D., 1988

机译：具有优化传输参数的应变In0.65Ga0.35as / In0.52al0.48as HEmT（高电子迁移率晶体管）的特性

3D Simulation and Optimization of Characteristics of Al0.1Ga0.9N/In0.2Ga0.8N High Electron Mobility Transistor with B0.03Ga0.97N Back-Barrier Layer

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