Design and Experimental Characteristics of Strained In0.52Al0.48As/InxGa(1-x)As (x 0.53) HEMT's (High Electron Mobility Transistors).

摘要

Strained In(0.52)Al(0.48)As/In(x)Ga(1-x)As(x>0.53) High Electron Mobility Transistors (HEMT's) are studied theoretically and experimentally. A device design procedure is reported that is based on bandstructure and charge control self-consistent calculations. It predicts the sheet carrier density and electron confinement as a function of doping and thickness of layers. The dc performance at 300K is presented. Wafer statistics demonstrate improvement of device characteristics with excess indium in the channel (E(m,int) = 500 and 700 mS/mm for x = 0.60 and 0.65). Microwave characterization shows the (f(T) = 40 and 45 GHZ and x = 0.60 and 0.65, respectively) and the R(ds) limitations of the 1-micron-long-gate HEMT's. Keywords: HEMT's; Bandstructure; Charge control self-consistent calculations. (EMK)