Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications.

摘要

This thesis presents the design, fabrication and detailed characterization of strained ;A set of theoretical criteria have been developed to allow the design of heterostructures for optimum device performance. Transport studies on these heterostructures show enhanced Hall mobilities and velocities when the channel Indium composition (x) increases from 0.53 to 0.65. A higher transconductance (g;In addition to the theoretical, DC and microwave study of SHHEMT's and DHHEMT's, the devices were also characterized at low frequencies (LF) in order to investigate their 1/f noise, g;Submicron (0.9 to 0.2 ;Finally, MMIC's using strained InAlAs/InGaAs HEMT's technology are reported for the first time and demonstrate their excellent potential for ultra-high frequency monolithic integrated circuit applications.