INDIUM GALLIUM ARSENIDE TRANSISTORS FORBROADBAND MICROWAVE APPLICATIONS

摘要

Depletion mode InGaAs insulated gate field effect transistors (IGFET's) with 1μm gate length and200μm gate width have been designed, fabricated and characterized for broadband microwave applications.The devices employed a plasma deposited silicon dioxide gate insulator with silicon interfacial layer to obtainstable amplifier IGFET. The amplifier IGFET's were fabricated on the same chip as the switch IGFET's toinvestigate the compatibility of the two types of transistors needed for multifunction MMIC's. The IGFET'shad a drain saturation current density of 400 mA/mm gate width with an extrinsic transconductance (Gm) of80mS/mm. A unity current gain cut off frequency (Ft) of 20 GHz and a unity power gain cut off frequency(Fmax) of 50 GHz were determined from the measured S-parameters. The IGFET performance at lowtemperatures was also investigated for space-borne cryogenic power electronic applications.