GALLIUM-INDIUM-NITRIDE-ARSENIDE BASED EPITAXIAL WAFER AND HIGH ELECTRON MOBILITY TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To realize GaInNAs-based HEMT(high electron mobility transistor) on a GaAs wafer to obtain a high performance HEMT capable of providing low-noise amplification.;SOLUTION: An epitaxial wafer comprises a gallium arsenide wafer 1 with its surface laminated in order of precedence by a buffer layer 2, a channel layer 3 having electron affinity higher than that of the buffer layer 2, and a carrier-providing layer 4 having electron affinity lower than that of the channel layer 3. The carrier-providing layer 4 is doped by a donor impurity and the channel layer 3 is constituted of a compound semiconductor comprising one of aluminum, gallium, or indium, or all of them, and either arsenic or phosphorus or both of them, and nitrogen.;COPYRIGHT: (C)2000,JPO