Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers.

摘要

This technical report examines sheet-resistance and Hall-effect results when using a Lehighton Electronics Inc. Model 1605B contactless mobility system. This report gives results on multiple samples including 4-inch, n-type Si; multiple AlGaN/GaN High Electron Mobility Transistor (HEMT) structures grown on SiC substrates; and an unintentionally doped (UID) GaN on sapphire template.