Defects in the ion-beam-synthesized epitaxial Si/CoSi_2/ Si(111) system

摘要

Rutherford back-scattering spectrometry and channelling experiments have been carried out with 1.9-3.7MeV He2+ ions on an ion-beam-synthesized epitaxial Si/CoSi2/Si(111) sample. Under the channelling condition, the back2 scattering yield, arising from the back-scattering of He2+ ions from the Co atoms at the bulk Si-CoSi2 interface, shows a linear energy dependence E1.0+/-0.1. This energy dependence is attributed to the presence of misfit dislocations. The dislocation density has been determined to be (4.5=0.5) 105cm-1. The back-scattering yield from Co atoms at the interface between the CoSi and the top Si epitaxial layer show a different energy dependence E-0.40.1, although misfit dislocations are also expected at this interface.