Determination of the interface atomic structure of A-type CoSi_2/Si(111) using TEM techniques

摘要

The atomic interface structure of the CoSi_2/Si(111) was determined by two different TEM techniques; (ⅰ) examination of the (111) stacking sequence across the ion implanted CoSi_2 precipitates in a silicon matrix; and (ⅱ) LACBED studies of thin CoSi_2 deposited on a silicon substrate observed in plan-view. The results from both samples showed that the interfacial Co atoms of A-type island must be 7-fold bonded.