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International Biannual Meeting on Gettering and Defect Engineering in Semiconductor

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1.Electron Mobility in Moderately Doped Si_(1-x)Ge_x

机译：中等掺杂Si_（1-x）Ge_x的电子移动性
- 作者：V. V. Emtsev;G. A. Oganesyan;N. Abrosimov;B. A. Andreev
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- SiGe alloys;
- Electron mobility;
- Alloy scattering;
2.Recombination Activity of Twin Boundaries in Silicon Ribbons

机译：硅丝带双界的重组活性
- 作者：E. B. Yakimov;O. V. Feklisova;S. K. Brantov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Si ribbon;
- Grain boundary;
- Twist boundary;
- Dislocation;
- EBIC;
- Iron;
3.Microdefects in heavily phosphorus-doped Czochralski silicon

机译：微量磷掺杂的Czochralski硅
- 作者：Zhenhui Wang;Xiangyang Ma;Deren Yang
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Heavily phosphorus-doped;
- Czochralski silicon;
- Oxygen precipitation;
- Grown-in defects;
- Flow pattern defects;
- FPDs;
- Voids;
- Rapid thermal annealing;
4.Interaction of point defects with impurities in the Si-SiO_2 system and its influence on the interface properties

机译：点缺陷在Si-SiO_2系统中对杂质的相互作用及其对界面性质的影响
- 作者：D. Kropman;E. Mellikov;T. Karner;I. Heinmaa;T. Laas;C. A. Londos;A. Misiuk
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Si-SiO_2 interface;
- EPR;
- NMR;
- Point defects;
- Stress relaxation;
5.Evolution of oxygen associated defects in Cz silicon during thermal annealing treatments: Comparison between experiment and simulation

机译：热退火处理过程中CZ硅中氧相关缺陷的演变：实验与仿真之间的比较
- 作者：J. Nicolai;N. Burle;B. Pichaud
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Oxygen precipitates;
- High temperature annealing;
- Ham's theory;
6.Formation of Copper-Related Deep-Level Centers in Irradiated p-Type Silicon

机译：照射P型硅中铜相关的深层中心的形成
- 作者：Nikolai Yarykin;Jorg Weber
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Copper impurity;
- Radiation defects;
7.Formation of Voids in SiO_2/Si Substrate by Zn Implantation and Thermal Annealing

机译：通过Zn植入和热退火形成SiO_2 / Si衬底中的空隙
- 作者：V. V. Privezentsev;P. N. Chernykh;D. V. Petrov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ion implantation;
- Thermal annealing;
- SiO_2;
- Zn impurity;
- Voids;
8.Stress relaxation mechanism by strain in the Si-SiO_2 system and its influence on the interface properties

机译：Si-SiO_2系统中应变的应力松弛机制及其对界面性质的影响
- 作者：D. Kropman;E. Mellikov;T. Karner;T. Laas;A. Medvid;P. Onufrijevs;E. Dauksta
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Si-SiO_2-Si_3N_4 interface;
- EPR;
- Point defects;
- Stress relaxation;
9.XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-ray Source

机译：XBIC对实验室X射线源多晶硅晶界晶界的研究
- 作者：R. R. Fahrtdinov;O. V. Feklisovaa;M. V. Grigorievb;D. V. Irzhakc;D. V. Roshchupkin;E. B. Yakimov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- XBIC;
- Si;
- Grain boundary;
- Iron contamination;
- EBIC;
- Contrast;
- Simulation;
10.Spectroscopic studies of Iron and Chromium in Germanium

机译：锗铁和铬的光谱研究
- 作者：Y. Gurimskaya;D. Mathiot;A. Mesli
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Germanium;
- Deep-level transient spectroscopy;
- Defects;
- Transition metals;
- Electronic properties;
11.Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

机译：在氮化硅膜涂覆的Czochralski硅晶片中的氮素增强氧气沉淀
- 作者：Xiangyang Ma;Liming Fu;Deren Yang
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Oxygen precipitation;
- Nitrogen;
- Czochralski silicon;
- Rapid thermal annealing;
- Silicon nitride film;
12.C-V - and DLTS-investigations of pyramid-shaped Ge Quantum Dots embedded in n-type Silicon

机译：C-V - 和DLTS研究N型硅嵌入金字塔形GE量子点的研究
- 作者：Victor-Tapio Rangel-Kuoppa;Alexander Tonkikh;Nikolay Zakharov;Peter Werner;Wolfgang Jantsch
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge Quantum Dots;
- Ge Quantum pyramids;
- CV;
- DLTS;
- Deep level;
- Activation energy;
13.Hydrogen-induced dissociation of the Fe-B pair in boron-doped p-type silicon

机译：硼掺杂P型硅的Fe-B对的氢诱导解离
- 作者：C. K. Tang;L. Vines;B. G. Svensson;E. V. Monakhov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Iron;
- Iron-boron pair;
- Hydrogen;
- Silicon;
- DLTS;
14.Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System

机译：使用内联掺杂系统在生产环境中实现高电阻发射器太阳能电池
- 作者：Wolfgang WILLE;Ralph ROTHEMUND;Gerald MEINHARDT;Wolfgang JANTSCH
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Sheet resistance;
- Contact resistance;
- Inline doping;
- Inline diffusion;
- Emitter profile;
15.Effects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline Silicon

机译：超声波清洁对单晶硅载流子寿命和光电电压的影响
- 作者：A. Nadtochiy;O. Korotchenkov;M. Drapalik;V. Schlosser
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Srface photovoltage;
- Srface cleaning;
- Ltrasonic cavitation;
16.Light trapping in monocrystalline Si solar cells using back-side diffraction gratings

机译：使用背面衍射光栅在单晶Si太阳能电池中捕获光
- 作者：Ralph Rothemund;Thomas Umundum;Gerald Meinhardt;Kurt Hingerl;Thomas Fromherz;Wolfgang Jantsch
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon solar cells;
- Diffraction grating;
- Light trapping;
- Rigorous coupled-wave analysis;
- RCWA;
- Ray tracing;
- Solar cell modelling;
17.Solid Phase Epitaxial Re-growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure

机译：在Si的固相外延重新生长在Si：Si在增强的静水压压力下退火
- 作者：Jadwiga Bak-Misiuk;Andrzej Misiuk;Adam Barcz;Przemyslaw Romanowski
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Cz-Si:Si;
- SPER;
- Self-implantation;
- Annealing;
- High hydrostatic pressure;
18.Electrical study of self-assembled Ge Quantum Dots embedded in ptype Silicon. Temperature dependent Capacitance Voltage and DLTS study

机译：PTTEPE硅中嵌入自组装GE量子点的电气研究。温度依赖电容电压和DLTS研究
- 作者：Victor-Tapio Rangel-Kuoppa;Gang Chen;Wolfgang Jantsch
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge Quantum Dots;
- Ge QDs;
- TCV;
- DLTS;
- Deep level;
- Activation energy;
19.Surface corrugation and stacking misorientation in multilayers of graphene on Nickel

机译：在镍上堆积的石墨烯多层的表面波纹和堆叠杂乱
- 作者：Vito Raineri;Corrado Bongiorno;Salvatore di Franco;Raffaella Lo Nigro;Emanuele Rimini;Filippo Giannazzo
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Graphene;
- Nickel;
- Atomic force microscopy;
- Transmission electron microscopy;
20.Boron-Oxygen-Related Defect in Silicon

机译：硅氧化硼相关缺陷
- 作者：L. I. Khirunenko;Yu. V. Pomozov;M. G. Sosnin;A. V. Duvanskii
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Boron;
- Oxygen;
- Illumination;
- Solar cells;
21.Time-resolved photocurrent measurements on PbS nanocrystal Schottky-contact photovoltaic cells

机译：PBS纳米晶体肖特基接触光伏电池的时间分辨光电流测量
- 作者：Ralph Rothemund;Susanne Kreuzer;Thomas Fromherz;Wolfgang Jantsch
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- PbS nanocrystals;
- Schottky–contact solar cell;
- Time–resolved photocurrent measurement;
22.Visible light-emitting hydrogenated nanocrystalline silicon-on-insulator films: formation and properties

机译：可见光发光氢化纳米晶体硅膜内膜：形成和性能
- 作者：Ida E. Tyschenko;Vladimir A. Volodin
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Nanocrystals;
- Amorphous silicon;
- Hydrogen ion implantation;
- Silicon-on-insulator;
- Visible photoluminescence;
23.Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

机译：携带二极管结构的载体寿命研究，无需GE掺杂
- 作者：A. Uleckas;E. Gaubas;J. M. Rafi;J. Chen;D. Yang;H. Ohyama;E. Simoen;J. Vanhellemont
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Czochralski silicon;
- Germanium doping;
- Carrier lifetime;
- Defects;
24.Reconstruction of a High Angle Tilt (11{tip}-0)/(001) Boundary in Si Using O- lattice Theory

机译：使用O字格理论重建SI中的高角度倾斜（11×} -0）/（001）边界
- 作者：N. Cherkashin;O. Kononchuk;M. Hytch
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Interfaces;
- Direct wafer bonding;
- O-lattice theory;
- Dislocations;
- 90° high angle grain boundary;
- Silicon;
25.The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process

机译：硅晶片中含氧沉淀物的机械建模在吸气形成过程的不同阶段
- 作者：Pavel Shushpannikov;Robert Goldstein;Konstantin Ustinov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon wafer;
- Internal getter;
- Precipitate;
- Inclusion;
- Dislocation loop;
26.New results on the bound exaction luminescence in Germanium

机译：锗束缚辐射发光的新结果
- 作者：M. Allardt;V. I. Kolkovsky;S. Kolodinski;N. V. Abrosimov;K. Irmscher;P. Clauws;J. Weber;K. Zuber
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Germanium;
- Luminescence;
- Bound excitons;
- Haynes rule;
27.Application of double crucible in Cz Si crystal growth

机译：双坩埚在CZ Si晶体生长中的应用
- 作者：Prostomolotov A. I.;Verezub N. A.
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Modeling;
- Double crucible;
- Heat transfer;
- Silicon;
- Single crystal;
- CZ growth;
- Hot zone;
- Impurity diffusion;
28.Modeling of lifetime distribution in a multicrystalline silicon ingot

机译：多晶硅芯片寿命分布的建模
- 作者：Yacine Boulfrad;Gaute Stokkan;Mohammed Mhamdi;Eivind Orelid;Lars Arnberg
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Multicrystalline silicon;
- Ingot;
- Defects;
- Iron;
- Dislocations;
- Lifetime;
29.Defect engineering in 2D photonic crystals fabricated by electrochemical etching of silicon

机译：硅电化学蚀刻制造的2D光子晶体中的缺陷工程
- 作者：E. V. Astrova;G. V. Fedulova;Yu. A. Zharova
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Photonic crystals;
- Electrochemical etching;
- Macroporous silicon;
- Tunable microcavity;
30.Radiation-induced Defect Reactions in Tin-doped Ge Crystals

机译：辐射诱导的锡掺杂Ge晶体中的缺陷反应
- 作者：V. P. Markevich;A. R. Peaker;B. Hamilton;V. V. Litvinov;Yu. M. Pokotilo;A. N. Petukh;S. B. Lastovskii;J. Coutinho;M. J. Rayson;P. R. Briddon
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge:Sn;
- Tin-vacancy defects;
- Energy levels;
- Ab-initio modeling;
31.Scanning X-ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon

机译：扫描X射线激发光学发光显微镜作为分析多晶硅中重组活性缺陷的新工具
- 作者：M. Trushin;O. Vyvenko;W. Seifert;A. Klossek;I. Zizak;M. Kittler
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
32.Oxygen precipitation studied by x-ray diffraction techniques

机译：X射线衍射技术研究的氧气沉淀
- 作者：M. Meduna;O. Caha;J. Ruzicka;S. Bernatova;M. Svoboda;J. Bursik
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Czochralski silicon;
- Oxygen precipitates;
- X-ray Laue diffraction;
33.Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix

机译：硅片基质嵌入中嵌入的非晶硅纳米团簇的光电流和光致发光
- 作者：O. M. Sreseli;O. B. Gusev;J. S. Vainshtein;Yu. K. Undalov;O. S. Yeltsina;A. A. Sitnikova;E. I. Terukov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Amorphous nanocluster;
- Amorphous silicon;
- Photoluminescence;
- Photocurrent;
- Photodetector;
- Efficiency;
34.Acceptor deactivation in silicon nanowires analyzed by scanning spreading resistance microscopy

机译：通过扫描散射电阻显微镜分析硅纳米线中的受体去激活
- 作者：R. Kogler;X. Ou;N. Geyer;P. Das Kanungo;D. Schwen;P. Werner;W. Skorupa
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Si nanowires;
- Doping;
- Ion implantation;
- Scanning spreading resistance microscopy;
35.Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

机译：精确提取MOSFET无重读界面状态空间分布从充电泵送测量
- 作者：Ivan Starkov;Stanislav Tyaginov;Hubert Enichlmair;Jong Mun Park;Hajdin Ceric;Tibor Grasser
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Interface states;
- Charge pumping;
- Hot-carrier degradation;
- TCAD;
- MOSFET;
36.Deep level defects in 4H-SiC Schottky diodes examined by DLTS

机译：DLTS检查4H-SIC肖特基二极管的深度缺陷
- 作者：Lukasz Gelczuk;Maria Dabrowska-Szata;Mariusz Sochacki;Jan Szmidt
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Deep levels;
- DLTS;
- SiC;
37.Studying light soaking of solar cells by the use of solar simulator

机译：利用太阳模拟器研究太阳能电池的光浸泡
- 作者：Tine Uberg Norland;Birger Retterstol Olaisen;Lars Arnberg
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Light induced degradation;
- Cz-Si;
- IV-characterization;
- Irradiance;
- Temperature;
38.Homogeneous and heterogeneous nucleation of oxygen in Si-CZ

机译：Si-CZ均匀和异质氧的氧气
- 作者：J. Kubena;A. Kubena;O. Caha;M. Meduna
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Vacancies;
- Interstitials;
- Silicon;
- Nucleation;
- Precipitation;
39.Analysis of Contaminated Oxide-Silicon Interfaces

机译：污染氧化硅界面分析
- 作者：M. L. Polignano;D. Codegoni;L. Castellano;S. Greco;G. Borionetti;F. Bonoli;A. Nutsch;R. Altmann;A. Leibold;M. Otto;P. Monge;C. Riva
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Oxide-silicon interface;
- Organic contamination;
- Surface segregation;
- MOS-DLTS;
40.Accumulation of VO Defects in n-Si at High-temperature Pulse Electron Irradiation: Generation and Annealing Kinetics Dependence on Irradiation Intensity

机译：高温脉冲电子照射N-Si中VO缺陷的累积：发电和退火动力学依赖照射强度
- 作者：M. Krasko;A. Kraitchinskii;A. Kolosiuk;V. Neimash;V. Voitovych;V. Makara;R. Petrunya;V. Povarchuk
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Electron irradiation;
- Vacancy-oxygen complex;
- Irradiation intensity;
41.Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si

机译：房间温度直接带有UNTRIOMGE P-I-N LED的直接带隙发射
- 作者：Tzanimir Arguirov;Martin Kittler;Michael Oehme;Nikolay V. Abrosimov;Erich Kasper;Jorg Schulze
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge;
- Dislocations;
- Light emitter;
- Luminescence;
42.Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

机译：过渡金属在硅辐射缺陷存在下的低温扩散
- 作者：Jan Vobecky;Volodymyr Komarnitskyy;Vit Zahlava;Pavel Hazdra
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Diffusion;
- Radiation enhanced diffusion;
- Platinum;
- Palladium;
- Chromium;
- Molybdenum;
- Nickel;
- Vanadium;
- Ion implantation;
- Helium;
- Carrier lifetime;
- Power devices;
43.1207cm~(-1) infrared absorption band in carbon-rich silicon crystal

机译：1207cm〜（-1）碳含硅晶体的红外吸收带
- 作者：Lin Chen;Xuegong Yu;Peng Chen;Xin Gu;Jinggang Lu;Deren Yang
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon crytal carbon impurity infrared aborption;
44.Fast light-induced solid phase crystallization of nanometer thick silicon layers on quartz

机译：纳米厚硅层的快速光诱导固相结晶
- 作者：T. Mchedlidze;T. Arguirov;M. Kittler
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Crystalline Si MQW;
- Thin Si films on quartz;
- Fast solid-phase crystallization by light;
45.Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals

机译：在Si-Ge单晶的均匀性退火时施加静压压力的影响
- 作者：Andrzej Misiuk;Jadwiga Bak-Misiuk;Barbara Surma;Wojciech Wierzchowski;Krzysztof Wieteska;Charalampos A. Londos;Nikolai V. Abrosimov;Jacek Kucytowski
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Si-Ge;
- Structural properties;
- Annealing;
- Hydrostatic pressure;
- Homogeneity;
46.Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium

机译：硅中的氢化辐射缺陷：氢气和氘的同位素作用
- 作者：Pavel Hazdra;Volodymyr Komarnitskyy;Vilma Bursikova
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Hydrogen;
- Deuterium;
- Silicon;
- Radiation defects;
47.Coefficient of Diffusion in Crystals of Si_(1-x)Ge_x: Role of Preexponential Factor

机译：SIN（1-x）GE _x晶体中的扩散系数_x：预指数因子的作用
- 作者：Vasilii Gusakov
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- SiGe alloys;
- Diffusion;
- Oxygen;
- Theory diffusion in alloys;
48.Iron gettering at slip dislocations in Czochralski silicon

机译：在Czochralski硅的滑移脱臼铁
- 作者：K. Lauer;M. Herms;A. Grochocki;J. Bollmann
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Interstitial iron;
- Dislocation;
- Gettering;
- Excess charge carrier lifetime;
49.Characterization of traps in crystalline silicon on glass film using deep-level transient spectroscopy

机译：深层瞬时光谱法玻璃膜结晶硅陷阱的特征
- 作者：T. Mchedlidze;J.-H. Zollondz;M. Kittler
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Thin film solar cells;
- Crystalline silicon on glass;
- DLTS of dislocation related traps;
50.Hydrogen decoration of vacancy related complexes in hydrogen implanted silicon

机译：氢气注入硅中空位相关络合物的氢气装饰
- 作者：Helge Malmbekk;Lasse Vines;Edouard V. Monakhov;Bengt G. Svensson
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Hydrogen;
- DLTS;
- MCTS;
- Implantation;
51.Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

机译：Si（001）亲水键合晶片脱位网络形成机制
- 作者：V. Vdovin;O. Vyvenko;E. Ubyivovk;O. Kononchuk
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon wafer bonding;
- Screw dislocations;
- Dislocation reactions;
- Transmission electron microscopy;
52.Synthesis of light emitting Ge nanocrystals by reactive RF sputtering

机译：反应性RF溅射的光发射Ge纳米晶体的合成
- 作者：Arturo Hernandez-Hernandez;Victor-Tapio Rangel-Kuoppa;Thomas Plach;Francisco De Moure-Flores;Jose G. Quinones-Galvan;Karen E. Nieto Zepeda;Martin Zapata-Torres;Miguel Melendez-Lira
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge Nanocrystals;
- Light emitting;
- Reactive RF Sputtering;
- Efros-Shkovskii hopping;
53.Tailoring the Electrical Properties of Undoped GaP

机译：剪裁未掺杂的间隙的电气性质
- 作者：P. Kaminski;R. Kozlowski;S. Strzelecka;A. Hruban;E. Jurkiewicz-Wegner;M. Piersa;M. Pawlowski;M. Suproniuk
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Defect levels;
- SI gallium phosphide;
- HRPITS;
54.Investigation of germanium implanted with hydrogen for layer transfer applications

机译：植入氢气锗锗的研究
- 作者：T. S. Perova;B. M. Armstrong;J. Wasyluk;P. Baine;P. Rainey;S. J. N. Mitchell;D. W. McNeill;H. S. Gamble;R. Hurley
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Germanium on Insulator;
- MOSFETs;
- Ion cut;
- Layer transfer;
- Spreading Resistance Profiling;
- Micro-Raman Spectroscopy;
55.Defect investigations via positron annihilation spectroscopy on proton implanted silicon

机译：质子植入硅上正电子湮没光谱缺陷调查
- 作者：A. J. Schriefl;S. Sgouridis;W. Schustereder;W. Puff
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Proton implantation;
- Positron annihilation;
- Silicon;
56.Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge

机译：高电阻率SI和GE中螺旋钻重组特性分析
- 作者：A. Uleckas;E. Gaubas;T. Ceponis;K. Zilinskas;R. Grigonis;V. Sirutkaitis;J. Vanhellemont
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Germanium;
- Silicon;
- Carrier recombination lifetimes;
- Auger recombination;
57.Recombination at oxide precipitates in silicon

机译：在氧化硅的氧化物沉淀物中的重组
- 作者：J. D. Murphy;K. Bothe;R. Krain;M. Olmo;V. V. Voronkov;R. J. Falster
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Recombination;
- Lifetime;
- Oxide;
- Precipitate;
- Capture coefficient;
- Cross-section;
58.Structural Defect Studies of Semiconductor Crystals with Laue Topography

机译：劳关地形半导体晶体的结构缺陷研究
- 作者：Alexander Groschel;Johannes Will;Christoph Bergmann;Hannes Grillenberger;Stefan Eichler;Max Scheffer-Czygan;Andreas Magerl
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- X-ray diffraction;
- Topography;
- Silicon;
- Oxygen precipitates;
- GaAs;
- Dislocations;
- Annealing;
- In-situ;
59.Classification of Recombination-active Defects in Multicrystalline Solar Cells made from Upgraded Metallurgical Grade (UMG) Silicon

机译：由升级冶金等级（UMG）硅制成的多晶硅电池中复合活性缺陷的分类
- 作者：D. Lausch;R. Bakowskie;M. Lorenz;S. Schweizer;K. Petter;C. Hagendorf
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Solar cell;
- Upgraded metallurgical grade silicon;
- Recombination active defects;
- Classification;
- Electrical breakdown;
60.Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin

机译：GE掺杂锡掺杂益型缺陷的形成和退火的特性
- 作者：L. I. Khirunenko;Yu. V. Pomozov;M. G. Sosnin;N. V. Abrosimov;H. Riemann
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Germanium;
- Tin;
- Oxygen;
- Radiation defects;
61.Analysis of electron-beam crystallized large grained Si films on glass substrate by EBIC, EBSD and PL

机译：通过EBIC，EBSD和PL分析玻璃基板上的电子束结晶大颗粒Si膜
- 作者：W. Seifert;D. Amkreutz;T. Arguirov;M. Krause;M. Schmidt
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Solar silicon;
- Dislocations;
- Grain boundaries;
- EBIC;
- EBSD;
- Diffusion length;
- Photoluminescence;
62.Positron Probing of Point Radiation Defects in Proton - Irradiated FZSilicon Single Crystals

机译：质子辐照氟硅单晶点辐射缺陷的正电子探测
- 作者：N. Yu. Arutyunov;M. Elsayed;R. Krause-Rehberg;V. V. Emtsev;G. A. Oganesyan;V. V. Kozlovski
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Vacancies;
- Complexes;
- Radiation defects;
- Silicon;
- Positron;
- Annihilation radiation;
63.TEM Characterization of Near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon

机译：定向凝固多晶硅近颗粒边界脱位的TEM表征
- 作者：Maulid Kivambe;Gaute Stokkan;Torunn Ervik;Birgit Ryningen;Otto Lohne
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Dislocations;
- Sub grain boundaries;
- Mc-si;
- TEM;
64.Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to Their Fabrication Conditions

机译：与其制造条件相关的自植石层的发光和结构性能
- 作者：N. A. Sobolev;Kalyadin;E. I. Shek;V. I. Vdovin;D. I. Tetelbaum;L. I. Khirunenko
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Luminescence;
- Defects;
- Dislocations;
- Ion Implantation;
- Annealing;
65.Electronic properties of ZnO/Si heterojunction prepared by ALD

机译：ALD准备的ZnO / Si异质结的电子特性
- 作者：V. Quemener;M. Alnes;L. Vines;O. Nilsen;H. Fjellvag;E. V. Monakhov;B. G. Svensson
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Zinc oxide;
- Silicon;
- Interface;
- DLTS;
66.Polycrystalline silicon layers with enhanced thermal stability

机译：多晶硅层增强热稳定性
- 作者：David Lysacek;Jan Sik;Petr Babor
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Polycrystalline silicon;
- Multilayer structure;
- Gettering;
- Chemical vapor deposition;
67.Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-structured Silicon

机译：纳米结构硅外延生长的锗结构缺陷的特征
- 作者：P. Zaumseil;Y. Yamamoto;J. Bauer;M. A. Schubert;J. Matejova;G. Kozlowski;T. Schroeder;B. Tillack
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge;
- Heteroepitaxy;
- Nano-structured Si;
- XRD;
- TEM;
68.In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction

机译：用X射线单晶衍射在硅中氧气的原位观察
- 作者：Johannes Will;Alexander Groschel;Christoph Bergmann;Andreas Magerl
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Static Debye-Waller factor;
- Statistical dynamical theory;
- Single crystal diffraction;
- Oxygen nucleation;
- In-situ;
- X-Ray;
- Wedge shaped geometry;
- Annealing;
69.IR Studies on VO_n, C_iO_i, and C_iC_s Defects in Ge-doped Cz-Si

机译：GE-DOPED CZ-SI中的VO_N，C_IO_I和C_IC_S缺陷的IR研究
- 作者：C. A. Londos;E. N. Sgourou;A. Andrianakis;A. Misiuk;V. V. Emtsev;H. O. hyama
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Ge-doped Si;
- Point defects;
- Electron irradiation;
- IR spectroscopy;
70.The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of p-type and n-type Silicon

机译：通过比较p型和n型硅的寿命降解硼 - 氧中心的性质
- 作者：V. V. Voronkov;R. Falster;K. Bothe;B. Lim;J. Schmidt
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Boron;
- Oxygen;
- Lifetime degradation;
71.Stimulated Creation of the SOI Structures with Si nano-clusters by low-dose SIMOX Technology

机译：通过低剂量SIMOX技术刺激与Si纳米簇的SOI结构的创建
- 作者：V. Litovchenko;B. Romanyuk;V. Melnik;V. Kladko;V. Popov;O. Oberemok;I. Khatsevich.
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Nanocluster;
- Buried layer;
- Ion implantation;
- Defects;
72.Towards the tailoring of P diffusion gettering to as-grown silicon material properties

机译：朝着剪裁P扩散吸气，以达到硅材料特性
- 作者：Jasmin Hofstetter;Jean-Francois Lelievre;David P. Fenning;Mariana I. Bertoni;Tonio Buonassisi;Carlos del Canizo
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Multi-crystalline silicon;
- Phosphorous diffusion;
- Extended gettering;
- Defect engineering;
- Iron;
73.Silicon PV Wafers: Mechanical Strength and Correlations with Defects and Stress

机译：硅PV晶片：与缺陷和应力的机械强度和相关性
- 作者：George Rozgonyi;Khaled Youssef;P. Kulshreshtha;M. Shi;Ethan Good
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
74.Investigation of defects in solar cells and wafers by means of magnetic measurements

机译：通过磁测量研究太阳能电池和晶片缺陷
- 作者：Rajko Buchwald;Stefan Kostner;Felix Dreckschmidt;Hans-Joachim Moller
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Shunt;
- Grain boundary;
- Electrical losses;
- Defects;
- Current;
- Current distribution;
- Current loss;
- Magnetic field distribution;
- Multicrystalline silicon;
- Magnetic measurement;
75.Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface

机译：亲水性粘合硅晶片界面的位错结构，电气和发光特性
- 作者：Anton Bondarenko;Oleg Vyvenko;ILiya Kolevatov;Ivan Isakov;Oleg Kononchuk
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Dislocation network;
- Dislocation-related luminescence;
- Silicon wafer bonding;
- Cathodoluminescence;
76.Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles

机译：辐射损伤曲线转换效率进入氢化供体谱
- 作者：J. G. Laven;R. Job;W. Schustereder;H.-J. Schulze;F.-J. Niedernostheide;H. Schulze;L. Frey
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Proton implantation doping;
- High-purity silicon;
- Hydrogen-related donors;
77.Bistable Defects as the Cause for NBTI and RTN

机译：双稳态缺陷作为NBTI和RTN的原因
- 作者：W. Goes;F. Schanovsky;H. Reisinger;B. Kaczer;T. Grasser
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Noise;
- Negative bias temperature instability;
- Charge trapping;
- Defects;
78.Transmission electron microscopy investigations of metal-impurity-related defects in crystalline silicon

机译：晶体 - 杂质相关缺陷的透射电子显微镜研究
- 作者：M. Seibt;P. Saring;P. Hahne;L. Stolze;M. A. Falkenberg;C. Rudolf;D. Abdelbarey;H. Schuhmann
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Extended defects;
- Silicon;
- Transmission electron microscopy;
- EBIC/FIB;
- Photovoltaics;
79.Intrinsic Point Defects in Silicon Crystal Growth

机译：硅晶体生长中的内在点缺陷
- 作者：V. V. Voronkov;R. Falster
- 会议名称：《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》 | 2011年
- Silicon;
- Vacancy;
- Self-interstitial;
- Oxygen;
- Voids;