Iron gettering at slip dislocations in Czochralski silicon

摘要

The impact of slip dislocations on the interstitial iron distribution in as-grown CZ silicon wafers is investigated by calibrated MWPCD excess charge carrier lifetime measurements, DLTS measurements and measurements of the dislocation density. In regions of high dislocation density low interstitial iron content as well as low lifetime is observed. A linear correlation between dislocation density and interstitial iron content is found. We explain this linear correlation by the thesis that slip dislocations are 60° dislocations, which have adsorbed one iron atom at each dangling bond along the dislocation axis. Interstitial iron is gettered by slip dislocations but iron silicide, which forms along the dislocation axis, is a very strong recombination center for excess charge carriers as well. Hence, gettering of interstitial iron at slip dislocations does not increase the electrical quality of silicon.