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机译:p型直拉硅中的生长缺陷引起的低温铁吸杂
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China,Department of Solid State Sciences, Ghent University, Belgium;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, PR China;
Czochralski silicon; Iron gettering; Grown-in defect;
机译:轴向温度梯度对切克劳斯基硅晶体中缺陷长大区形成的影响;环形OSF内部和外部之间的缺陷区域反转
机译:通过牺牲多孔硅层提高p型直拉硅的除杂效率的新方法
机译:多孔硅损坏后,p型切克劳斯基硅中多数载流子的霍尔迁移率大大提高:提高吸杂效率的解决方案
机译:氧化物低温硼和磷扩散吸收的氧气在Czochralski-生长硅中的影响
机译:碳化硅中缺陷中心的低温光致发光研究。
机译:使用牺牲多孔硅层的多晶硅磷扩散吸杂工艺
机译:氧在直拉生长硅中低温硼和铁的磷扩散吸收中的作用
机译:高压 - 高温处理对中子辐照诱导的切克劳斯硅缺陷的影响。