Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

机译：Si（001）亲水键合晶片脱位网络形成机制

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Structures of Si(001) hydrophilically bonded wafers have been studied by transmission electron microscopy. A model of three-fold nod generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

机译：已经通过透射电子显微镜研究了Si（001）亲水键合晶片的结构。已经提出了一种在交叉混合脱位相互作用期间的三倍点线的模型，并应用于分析错位网络的几何特征。讨论了SI键合晶片之间的界面处的脱位产生的可能机制。

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来源
《International Biannual Meeting on Gettering and Defect Engineering in Semiconductor》|2011年||共6页
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V. Vdovin; O. Vyvenko; E. Ubyivovk; O. Kononchuk;
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原文格式 PDF
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中图分类 TN3-532;
关键词
Silicon wafer bonding; Screw dislocations; Dislocation reactions; Transmission electron microscopy;

机译：硅晶片键合;螺丝脱位;脱位反应;透射电子显微镜;

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1. Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers [J] . Vdovin V., Vyvenko O., Ubyivovk E., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：Si（001）亲水性键合晶片中位错网络形成的机理
2. Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers [J] . Vdovin V.I., Ubyivovk E.V., Vyvenko O.F. Semiconductors . 2013,第2期

机译：Si（001）晶圆边界上位错网络形成的规律
3. Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers [J] . Anton Loshachenko, Oleg Vyvenko, Oleg Kononchuk Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2014,第Null期

机译：亲水直接键合硅晶片中通过位错网络进行氢运动的动力学。
4. Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers [C] . V. Vdovin, O. Vyvenko, E. Ubyivovk, Gettering and defect engineering in semiconductor technology XIV . 2011

机译：Si（001）亲水键合晶片中位错网络形成的机理
5. Formation mechanism of germanium self-assembled quantum dots (SAQDs) on silicon(001) with an undulated strain field. [D] . Kim, Hyung jun. 2003

机译：硅（001）上具有波动应变场的锗自组装量子点（SAQD）的形成机理。
6. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSi overlayer on Si(001) [O] . E. Maras, L. Pizzagalli, T. Ala-Nissila, -1

机译：Si（001）上GeSi覆盖层中位错释放晶格应变的原子尺度形成机理
7. Dislocation structure in low-angle interfaces between bonded Si(001) wafers [O] . T. Akatsu, R. Scholz 2014

机译：键合si（001）晶片之间的低角度界面中的位错结构
8. Bonded Silicon-on-Sapphire Wafers and Devices. (Reannouncement with New Availability Information). [R] . Imthurn, G. P., Garcia, G. A., Walker, H. W., 1992

机译：保税硅蓝宝石晶圆和器件。（重新公布新的可用性信息）。

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

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